History

2012

Process unit working with 90 nm technology was opened at the plant of JSC Mikron. The launch of the new line leads to the increase of production capacity of the plant up to 36 000 wafers with the diameter 200 mm (8 inch) per year

2011

On the base of R&D center of  Mikron was created open joint stock company Molecular Electronics Research Institute (MERI). MERI was introduced to widen the technological level 180-90 nm in the Mikron’s 8” Fab, the creation of new technologies, 65-45nm and less, the coordination of Russian Academy of Science’s work, some other institutes and laboratories in order to make them commercial in the mass semiconductors production”. The Director General of MERI became Gennady Krasnikov.

JSC "Mikron" entered the top of ten leading  innovative companies in Russia according to the business publication by Fast Company

2010

An agreement was signed on transfer of the 90 nm integrated circuit production technology from STMicroelectronics Company to Mikron.

JSC SITRONICS acted as general partner of the international conference “Russian Microelectronics Market – Development Prospects” (February 26, Moscow).

Mikron and SITRONICS Microelectronics acted as official partners of the annual international exhibition SEMICON Russia 2010 (June 15-16, Moscow). Within the framework of the event, Mikron held a meeting of participants and partners of Zelenograd semiconductor cluster.

2009

The Russian Corporation of Nanotechnologies (RUSNANO) and Joint-Stock Financial Corporation Sistema signed an agreement on creation of 90 nm integrated circuit production on 200 mm wafers using STMicroelectronics technology on the basis of JSC Mikron’s production area and infrastructure.

JSC Mikron confirmed compliance with the standard of the environmental management system (EMS) ISO 14001:2004. Audit was performed by the international company Bureau Veritas Certification Rus.

SITRONICS Smart Technologies won a number of tenders:

• For supply of plastic card blanks with a magnetic strip for the key player of the Russian banking sector – Bank VTB24;
• For supply of microprocessor cards VISA and Master Card for the country’s largest bank – Sberbank of Russia;

For supply of SIM cards for one of the leading mobile operators in Russia – JSC Megafon.

2008

Gennady Krasnikov, director general of JSC Mikron, was awarded the Order “For Merit before Fatherland” of the IV rank, was elected a member of Russian Academy of Science (RAS) and became a member of the EMEA Leadership Council of the Global Semiconductor Alliance, GSA.

Mikron was the first among Russian microelectronics manufacturers to certify its production as per the Environmental Management Standard ISO 14001.

Production of bank cards with a chip, organized in SITRONICS Smart Technologies, was certified according to Visa and MasterCard standards.

SITRONICS Smart Technologies started delivery of SIM-cards of enlarged capacity EEPROM 128 Kb, which allows extending SIM-menu user functionality. The company has developed and successfully commissioned the Dynamic Sim ToolKit (DSTK) platform for mobile operators.

2007

JSC Mikron started production of 0.18 μm EEPROM integrated circuits. SITRONICS Microelectronics became a member of the international association EUROSMART

JSC Mikron, together with Russia Managers Association, conducted the 1^st International Microelectronics Conference.

JSC Mikron joined the international semiconductor trade association FSA, now GSA (Global Semiconductor Alliance).

2006

An agreement was signed with STMicroelectronics on transfer of the technology of manufacturing 0.18 μm EEPROM integrated circuits to JSC Mikron. Mikron started production of chip modules for contact smart-cards. In November, JSC Mikron started working with the rules of integrated circuit design using the 0.18 μm EEPROM technology for Russian design centres.

In December, Mikron started assimilation of the complete production cycle of RFID transport tickets and started delivery of tickets for Moscow Underground.

SITRONICS Smart Technologies started production of SIM-cards for the telecommunication industry within the framework of the business direction SITRONICS Microelectronics.

2005

A LCD component assembly workshop was opened.

2002

A new Design Centre was opened.

2001–2005

RF Government Resolution awarded JSC Mikron the RF Government for the achieved success. In 2001 Mikron was awarded two gold and two silver medals for development of new processing routes during the First Moscow International Showroom for Innovation and Investment.

The design and production technology of micromechanical fibre-optic switch were developed, pilot specimens were made. Mikron was the first of Russia’s industrial enterprises to enter the stocks market.

2000

JSC Mikron became part of the high-tech holding “Corporate Group “Scientific Centre” (now SITRONICS Corporate Group). JSC Mikron became the parent enterprise of the business direction “Microelectronics” of the SITRONICS Corporate Group.

Smart Cards Company was founded (now SITRONICS Smart Technologies), which became part of the business direction SITRONICS Microelectronics.

VSP-Mikron was created on the basis of Voronezh Semiconductor Plant.

1999

The international certificate of Bureau Veritas Quality International for compliance of the quality management system according to ISO 9000 regulations was obtained.

1996 – 2000

High-speed DAC and ADC circuits of series 572 were developed and mastered. Over 200 types of integrated circuits, previously made by other plants, were mastered. A new clean room was built; manufacture of ICs on 150 mm silicon wafers under design standards 0.8 μm was started.

1991 – 1995

In 1991, Mikron was headed by G.Ya. Krasnikov. In the same year, a pilot specimen of a colour 100 mm LCD was developed. Mikron got the right of independent entry to foreign markets; series delivery of circuit chips for Samsung was started. Mounting of the clean room “OZONE-1” of grade 10 based on domestic components was completed.

On January 13, 1994, Moscow Registration Chamber registered the enterprise as an open joint-stock company “Research and Development Institute for Molecular Electronics and Mikron Plant”. The technology of manufacturing BiCMOS IC was developed, hardware components of modern BiCMOS ICs was created using the self-aligned technology (7 RF patents).

1986 – 1990

First ICs with programmable logical matrices of series 556 and 1556 were produced. Commercial manufacture of the master-slice chip BMK-I-300B (processing speed 0.35 ns per gate, 1500 gates per chip) as the hardware component of domestic supercomputers was organized. The domestic super-aligned technology of making bipolar transistors with a high integration degree and processing speed 0.15 ns per gate was developed. The first circuits of the PAL family and television ICs were mastered.

1978 – 1985

A universal high-speed microprocessor set of series 1802, designed for defence equipment (namely, for air defence complexes), was developed.

1980

Mikron Plant made the 100-millionth integrated circuit; integrated circuits were delivered for supporting the Mars-Venus programme; production of CMOS memory devices with random access was started; the plant created production on the basis of domestic “clean rooms”.

1977

In 1977, the country’s first set of microprocessor integrated circuits TTL with Schottky diodes was developed. The first domestic process of manufacturing ICs with oxide isolation (“isoplanar”) was mastered – the basis for manufacturing bipolar ICs of the next generation. The basic process of IC production with the use of ion-implantation doping was developed and implemented; plasmochemical processes were implemented in the IC production technology.

1971 – 1975

In 1971, all four sections of the Mikron plant of total area over 60 thous. sq. m. were delivered for mounting. Integrated circuits of series 155 were for the first time certified for the highest quality category. The “Quality mark” was assigned in 1972.

Commercial production of logical digital ICs of series 100 and 500 with processing speed 2 ns per gate, developed at the plant, was started, providing the hardware components for:

• The supercomputer Elbrus-2;
• The machines “Riad”, designed for solving strategic goals of national economy, global ecology and defence;
• The unified computer system used in the national economy of CMEA countries;
• “Bulat” computer (custom machines for defence purposes).

1966 – 1970

Production volume in 1966 was 100,000 integrated circuits. On February 1, 1967, the Order of the Minister of Electronic Industry of the USSR, the Mikron Plant for integrated circuit manufacture was organized at NIIME. The following were developed and created for the first time in the country:

• The planar technology of gallium-arsenide integrated circuits;
• The plastic IC package and the moulding composition;
• Microcircuit chips of emitter-coupled logic (ECL);
• Digital (transistor-transistor logic) and analogue ICs of large-scale use.

Over 3.5 mln integrated circuits have been produced and delivered to various industries by 1970.

1965

On January 25, K.A. Valiyev was appointed director of NIIME. NIIME had 183 employees at the beginning of the year. Most of the employees worked in the common room of the Elion plant. Areas of the Component plant were used for organization and starting of the first line for manufacturing the unpackaged planar bipolar n-p-n-transistor. The end of the year saw completion of construction of the own building for NIIME having an area of 25 thous. sq. m.

1964

The Scientific Research Institute for Molecular Electronics (NIIME) was established as per Order of the State Committee of the USSR for electronic equipment dated 09.03.1964 No. 50.

1962

The Scientific Research Institute for Precision Engineering (now NIITM JSC) was established.

1959

The Voronezh Semiconductor Plant (now VSP-Mikron) was established.

A new science, microelectronics, was born and began to develop actively in the USSR at the end of the 50-ies - the beginning of the 60-ies of the past century. Realizing the necessity of creating own microelectronic industry, the State Committee of the USSR for electronic equipment decided to organize the R&D institutes and plants, which were the basis for formation of domestic microelectronics.